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| 6R1MBI100P-160 Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A Features * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Diode Module Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current One cycle surge current I2t Operation junction temperature Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VRRM VRSM IO IFSM I2t Tj VCES VGES IC 50Hz/60Hz sine wave Tc=110C From rated load From rated load Condition Rating 1600 1760 100 1000 4000 -40 to +125 1400 20 75 50 150 100 360 1400 +150 -40 to +125 2500 2.0 to 2.5 Unit V V A A A 2s C V V A A W V C C V N*m Converte arc m 1ms ICP on . te Collector power disspation 1 device PC ole esign Repetitive peak reverse voltage VRRM obs w d Operation junction temperature Tj be ne AC : 1 minuteed Tstg Storage junction temperature r l M5 screw Viso Isolation voltage du nd fo e Mounting screw torque sch me is c ct otherwiseom Electrical characteristics (Tj=25C unless re specified) odu Symbol Condition Item Min. Typ. Max. ot r N Fofward voltage VFM 1.30 sp Tj=25C, IFM=100A i Reverse current Th IRRM 20 Tj=150C, VR=VRRM DC Tc=25C Tc=75C Tc=25C Tc=75C Brake Co. h 0 20 7. Unit V mA mA nA V s Zero gate voltage Collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Brake Turn-off time Reverse current ICES IGES VCE(sat) ton tr toff tf IRRM VGE=0V. VCE=1400V VCE=0V. VGE=20V VGE=15V. IC=50A Vcc=800V Ic=50A VGE=15V RG=25ohm 2.4 0.35 0.25 0.45 0.08 1.0 200 2.8 1.2 0.6 1.0 0.3 1.0 mA Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Condition Converter Per total loss Per each device Brake IGBT (1 device) with thermal compound Min. Typ. Max. 0.14 0.84 0.55 0.08 Unit C/W Thermal Resistance(Case to fine) Rth(c-f) C/W Diode Module Forward Characteristics 300 6R1MBI100P-160 O u tp u t C u r r e n t - T o ta l L o s s 100 90 Forw ard Current V F(V ) 80 70 60 50 40 max 250 typ 200 150deg Total Loss (W) 150 25deg 30 20 100 50 10 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 0 50 100 150 O u tp i t C u r r e n t Io ( A ) Forward Current IF(A) O u tp u t C u r r e n t - C a s e T e m p e r a tu r e 1200 130 S u r g e C u rr e n t 120 1000 Case Tempreture Tc (deg.C) 110 Peak Surge Current IFSM (A) 800 100 90 80 70 60 50 0 1 h arc m on . te ole esign obs w d e d b or ne le du nd f e sch me is ct recom odu e d aot r [ B ra ke ] Tra nsie nt The rm a l Im p e d a nc e Tra ns ie nt The rm a l Im p N nce is p Th 600 400 200 50 100 0 20 7. 0 0 .0 1 0 .1 1 O u t p u t C u r r e n t Io ( A ) T im 10 FW D Zth(j-c)(t) (deg.C/W) 0.1 1 Zth(j-c)(deg.C/w) IG BT 0 .1 0.01 0.00 1 0.00 1 0.01 0.1 1 10 0 .0 1 0 .0 0 1 0 .0 1 0 .1 1 10 Tim e T im e (s e c ) Diode Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 120 120 6R1MBI100P-160 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 100 VGE= 20V 15V 12V 100 VGE= 20V 15V 12V Collector current : Ic [ A ] 80 10V 60 Collector current : Ic [ A ] 80 10V 60 40 40 20 8V 0 0 1 2 3 4 5 20 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 120 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) Tj= 25C 100 Tj= 125C Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 80 60 40 20 0 0 1 Collector - Emitter voltage : VCE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 20000 10000 Th arc m on . te ole esign obs w d e d b or ne le du nd f e sch me is ct recom odu ot r N is p 4 Ic= 100A Ic= 50A 2 Ic= 25A 0 2 3 4 5 5 10 15 20 25 6 h 0 20 7. Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=50A, Tj= 25C 1000 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Cies 600 15 1000 Coes 400 10 Cres 200 5 100 0 5 10 15 20 25 30 35 0 0 100 200 300 400 0 500 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] Diode Module Outline Drawings, mm 6R1MBI100P-160 90 78.5 4- O 6.1 C3 2- O5.5 11.75 7 14 7 0.5 21 7 + 23.5 16 - G E C 11 K 11.75 O 2.5 14 14 28.5 11 32 3 3.4 O 2.1 2 x t1 R1 arc m 6R1MBI100P-160 on . te ole esign obs w d e d b or ne le du nd f e Equivalent Circuit Schematic sch me is ct recom odu ot r N is p h T 6 JAPAN K C G E 13 17 20.4 h 0 20 7. 1.5 |
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